{"title":"Progress with high efficiency IMPATT diodes","authors":"J. Gewartowski","doi":"10.1109/ISSCC.1977.1155719","DOIUrl":null,"url":null,"abstract":"High-efficiency diodes of early design were relatively noisy, wi th noise measures in excess of 50 dB. Recent designs have achieved noise measures about 10 dB lower. Unlike the uniformly-doped IMPATT diodes, the noise measure a t low R F levels does not improve very much, and hence, the high-efficiency diode may not be suitable for an application where the noise performance is critical. This has resulted in amplifier designs where flat-profile diodes are used for the first stages and high-efficiency diodes are used for the power stages.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1977.1155719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-efficiency diodes of early design were relatively noisy, wi th noise measures in excess of 50 dB. Recent designs have achieved noise measures about 10 dB lower. Unlike the uniformly-doped IMPATT diodes, the noise measure a t low R F levels does not improve very much, and hence, the high-efficiency diode may not be suitable for an application where the noise performance is critical. This has resulted in amplifier designs where flat-profile diodes are used for the first stages and high-efficiency diodes are used for the power stages.
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