Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN

Xianya Li, C. Chang, Chih-han Hsueh, Zyh-Fu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, Xinqiang Wang, N. Dietz, Guan Yong-jing, Z. Feng
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Abstract

InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.
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InxGai-xN的铟氮k边x射线吸收光谱
利用分子束外延技术(MBE)成功地在GaN/蓝宝石(0001)上生长出了几乎整个铟组成范围的InGaN薄膜。分别采用x射线吸收精细结构(XAFS)和x射线吸收近边结构(XANES)对样品进行了研究。它们都是用光滑数据得到的。基于JFEFF计算程序,氮k边x射线吸收能约为400eV,与实测数据吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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