Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang
{"title":"ON Current Enhancement by Gate Controlled Strain in The InAs n-Type Piezoelectric Tunnel FETs","authors":"Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang","doi":"10.23919/SNW.2019.8782933","DOIUrl":null,"url":null,"abstract":"The gate-controlled strain induced by piezoelectric layers is used to boost the ON current of InAs $n -$ type piezoelectric tunnel FETs. The advanced NEGF method with strained 8-band ${k\\cdot p}$ Hamiltonian is employed in transport simulation. Our results suggest that the Piezo-TFETs can achieve about 80% enhancement of ION for the optimal device orientation $[\\overline{\\mathbf{1}} \\mathbf{1} \\mathbf{0}] /(\\mathbf{1} \\mathbf{1} \\mathbf{0})$.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The gate-controlled strain induced by piezoelectric layers is used to boost the ON current of InAs $n -$ type piezoelectric tunnel FETs. The advanced NEGF method with strained 8-band ${k\cdot p}$ Hamiltonian is employed in transport simulation. Our results suggest that the Piezo-TFETs can achieve about 80% enhancement of ION for the optimal device orientation $[\overline{\mathbf{1}} \mathbf{1} \mathbf{0}] /(\mathbf{1} \mathbf{1} \mathbf{0})$.