Y. Won, Farzad Houshmand, D. Agonafer, M. Asheghi, K. Goodson
{"title":"Microfluidic Heat Exchangers for High Power Density GaN on SiC","authors":"Y. Won, Farzad Houshmand, D. Agonafer, M. Asheghi, K. Goodson","doi":"10.1109/CSICS.2014.6978568","DOIUrl":null,"url":null,"abstract":"The high power densities targeted for GaN HEMT on SiC technology can dramatically increase the performance of radar systems. The increasing power will require improved heat removal technologies associated with conduction and convection. Here we explore combined cooling technologies based on SiC substrate and SiC or Cu microstructures, which improve the thermal performance of high power devices.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978568","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The high power densities targeted for GaN HEMT on SiC technology can dramatically increase the performance of radar systems. The increasing power will require improved heat removal technologies associated with conduction and convection. Here we explore combined cooling technologies based on SiC substrate and SiC or Cu microstructures, which improve the thermal performance of high power devices.
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