A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology

Sona Carpenter, Z. He, M. Bao, H. Zirath
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引用次数: 24

Abstract

A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.
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基于250nm InP DHBT技术的40gbps无线d波段高集成度通信芯片组
描述了一种基于250 nm InP DHBT技术的高数据速率d波段(110-170 GHz)无线通信的高度集成芯片组,包括发射器(TX)和接收器(RX)芯片。该芯片组专为4G和5G移动通信基础设施的点对点无线通信、高数据速率回程、低延迟无线HDTV传输和> 40gbps介质波导传输而设计。测量的RX转换增益为26 dB,噪声系数为9 dB。测量的TX转换增益为20db。最大QPSK数据速率为44 Gbps,比目前最先进的d波段数据速率高出2倍。
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