TF004 - interfacing complex oxides to gallium nitride

M. Losego, H. S. Craft, S. Mita, T. Rice, R. Collazo, Z. Sitar, J. Maria
{"title":"TF004 - interfacing complex oxides to gallium nitride","authors":"M. Losego, H. S. Craft, S. Mita, T. Rice, R. Collazo, Z. Sitar, J. Maria","doi":"10.1109/ISAF.2008.4693846","DOIUrl":null,"url":null,"abstract":"Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.
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TF004 -氮化镓复合氧化物界面
功能复合氧化物与氮化镓的集成对于包括智能场效应管和高温电子设备在内的先进器件架构具有吸引力。包含大带隙界面氧化物层对带排列兼容性很感兴趣。本文综述了用分子束外延法在含氧化镁和CaO的大带隙岩盐氧化物缓冲层中外延生长的研究进展。讨论了射频磁控溅射外延沉积铁电氧化物的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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