Single event sensitivity and de-rating of SiC power devices to heavy ions and protons

Abstract

We present single event tests performed on silicon carbide power devices (MOSFET, JFET, Schottky diodes). The data were taken across four campaigns with heavy ions up to Krypton at the Heavy Ion Facility, UCL, Louvain-la-Neuve, with Xenon ions at the G4 cave at GANIL, Caen, with ultra-energetic Xenon at the H8 beamline at CERN and 45 MeV protons at the JULIC cyclotron, research centre Jülich. Throughout all tests the devices showed a high sensitivity to destructive single event induced failures even at low LETs or protons and significant derating.