Influence of chromium sublayer on silicon P-I-N photodiodes responsivity

Abstract

The level of silicon p-i-n photodiodes responsivity depending on thickness of the chromium sublayer on the back side of the device crystal, which is deposited to improve adhesion of gold, was studied. Transmission spectra of the chromiumfilm at its different thicknesses were obtained. It was found that starting from the sublayer thickness of 17 nm and less, the transmittance changes by one percent, which does not lead to an increase in photoresponsivity with a further decrease in the thickness of chromium.