A low voltage low power temperature sensor using a 2nd order delta-sigma modulator

Filipe Quendera, N. Paulino
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引用次数: 3

Abstract

This paper presents a low power low voltage temperature sensor designed in a 0.13 μm CMOS technology. The circuit consist of a bandgap voltage reference and a second order sigma-delta modulator. The circuit was designed to operate with a minimum power supply of 0.5 V. The voltage reference circuit operates from -50°C to 110°C with a temperature coefficient of 67.15 (ppm/°C) with a maximum power dissipation of 5.9μW. The bandgap circuit combined with the second order ΔΣ modulator dissipates 6.1μW to 11.7μW over a -30°C to 70°C range.
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采用二阶δ - σ调制器的低电压低功率温度传感器
提出了一种采用0.13 μm CMOS工艺设计的低功耗低压温度传感器。该电路由带隙基准电压和二阶σ - δ调制器组成。该电路被设计为在0.5 V的最小电源下工作。基准电压电路工作范围为-50℃~ 110℃,温度系数为67.15 (ppm/℃),最大功耗为5.9μW。结合二阶ΔΣ调制器的带隙电路在-30°C至70°C范围内的功耗为6.1μW至11.7μW。
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