Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park
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引用次数: 4
Abstract
This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.
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