A. Subramaniam, K. D. Cantley, R. Chapman, B. Chakrabarti, E. Vogel
{"title":"Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift","authors":"A. Subramaniam, K. D. Cantley, R. Chapman, B. Chakrabarti, E. Vogel","doi":"10.1109/DRC.2011.5994433","DOIUrl":null,"url":null,"abstract":"Hydrogenated nano-crystalline-silicon (nc-Si) thin-film transistors (TFTs) are primary candidates for use in neuromorphic circuits and systems [1]. Such devices can be fabricated at low temperatures and over large areas, allowing cheap processing and three-dimensional integration with CMOS structures. The major drawbacks of nc-Si TFTs include low carrier mobility, threshold voltage (VT) shift under bias stress and lack of p-channel operation due to unintentional n-type doping by oxygen impurity present in the nc-Si layer [2]. We have fabricated nc-Si TFTs that minimize all the above drawbacks, and are thus well suited for use in neuromorphic applications.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Hydrogenated nano-crystalline-silicon (nc-Si) thin-film transistors (TFTs) are primary candidates for use in neuromorphic circuits and systems [1]. Such devices can be fabricated at low temperatures and over large areas, allowing cheap processing and three-dimensional integration with CMOS structures. The major drawbacks of nc-Si TFTs include low carrier mobility, threshold voltage (VT) shift under bias stress and lack of p-channel operation due to unintentional n-type doping by oxygen impurity present in the nc-Si layer [2]. We have fabricated nc-Si TFTs that minimize all the above drawbacks, and are thus well suited for use in neuromorphic applications.