J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa
{"title":"1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition","authors":"J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa","doi":"10.1109/ISLC.2004.1382752","DOIUrl":null,"url":null,"abstract":"This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.
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