Migration of impurities from cable shields and tree initiation in XLPE

A. Belhadfa, A. Houdayer, P. Hinrichsen, G. Kajrys, J. Crine, R. Gilbert
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引用次数: 4

Abstract

The authors present laboratory results obtained with plaques of cable-grade XLPE (cross-linked polyethylene) pressed on plaques made of commercial shield compound. The samples were kept at various temperatures in air and in water for several weeks. The local impurity contents were measured at various distances from the shield-insulation interface by micro-PIXE (proton induced X-ray emission). The correlation between the impurity kinetics thus measured and impurities detected in water trees grown in XLPE cables is discussed. In addition to the elemental analysis, ionic content measurements were also performed on resins, and the ions detected correspond to the major elemental contaminants. Although it is not yet clear whether impurities affect tree growth, the fact that water and electrical trees are heavily contaminated suggests the possible influence of contamination. The nature of the most mobile impurities is also the same as those of the major contaminants in trees. The inorganic ions also correspond to these elements, which adds further evidence for their possibly detrimental role in XLPE cable aging.<>
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XLPE中电缆屏蔽层中杂质的迁移和树形起始
作者介绍了将电缆级XLPE(交联聚乙烯)斑块压在商用屏蔽化合物制成的斑块上的实验室结果。这些样品在空气和水中以不同的温度保存了几个星期。在距离屏蔽-绝缘界面不同距离处,用质子诱导x射线微发射仪测量了局部杂质含量。讨论了所测杂质动力学与在交联聚乙烯电缆中生长的水树中检测到的杂质之间的关系。除了元素分析外,还对树脂进行了离子含量测量,检测到的离子与主要元素污染物相对应。虽然目前尚不清楚杂质是否会影响树木的生长,但水树和电树受到严重污染的事实表明,污染可能会产生影响。最易移动的杂质的性质也与树木中的主要污染物的性质相同。无机离子也与这些元素相对应,这进一步证明了它们在XLPE电缆老化中可能起的有害作用。
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On the mechanism of partial discharges in gaseous cavities in contact with solid or liquid insulators The initiation and growth of AC tree in polyethylene Effects of the field dependent occupation of electrical-stress-generated traps on the conduction and breakdown of thin SiO/sub 2/ films A model of the electrical breakdown process due to electrical treeing growth Dielectric breakdown and partial discharge in BaTiO/sub 3/ ceramics
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