Y. Chou, G. Li, D. Leung, Z. Wang, Y.C. Chen, R. Lai, C. Wu, R. Kono, P. Liu, J. Scarpulla, D. Streit
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引用次数: 5
Abstract
Degradation effects by hot carrier (HCID) and high channel temperature (HCT) are investigated for millimeter wave power HEMT's with a gate length of 0.1 /spl mu/m and 0.15 /spl mu/m. While both HCID and HCT induce drain current reduction, they post distinct failure mechanisms. Our hypothesis is that carrier density reduction under the gate contact which results in I/sub ds/ decrease might account for HCID and gate metal sinking is caused by HCT.
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