Effect of Drain Splitting on Silicon Nano-Tube Tunnel Field Effect Transistor

Abstract

In this research work, researchers have investigated the drain-engineered Silicon nano-tube tunnel FET. The performance of the Tunnel FET (TFET) by modulating the doping concentration in the drain region has been realized. For the realization of the tunnel FET in electronic device simulation non-local band to band tunneling (BTBT) model is utilized. The TFET device proposed in this work is tubular type in which there is a gate inside and outside the tube, due to which the controlling capacity over the charge carriers is excellent. Results have been compared with 45 nm gate length conventional Silicon nano-tube tunnel FET. It has been realized that on decreasing the doping of the split drain region, the ambipolar current decreased from 10-9 A/μm to 10-11 A/μm, due to which it becomes suitable for low power memory applications, devices, and FETs. The outcomes show that the drive capability of the devices is increased.