Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650500
Y. Wahyu, K. Paramayudha
In this paper; an S-band edge-slotted waveguide antenna array is proposed. The array consists of 40 antenna elements to achieve a very high-gain performance with a pencil-beam pattern. The radiating slots were milled in the narrow wall of a WR-284 waveguide. The simulated result shows that the proposed antenna operates in the S-band frequency. The gain of the antenna is 42 dBi, with a vertical and horizontal beamwidth of 1.3° and 0.4°, respectively. All these results suggest that the antenna is suitable for ground-controlled interception (GCI) Radar.
{"title":"Design of an Edge-Slotted Waveguide Antenna Array for Ground-Controlled Interception Radar","authors":"Y. Wahyu, K. Paramayudha","doi":"10.1109/ICRAMET53537.2021.9650500","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650500","url":null,"abstract":"In this paper; an S-band edge-slotted waveguide antenna array is proposed. The array consists of 40 antenna elements to achieve a very high-gain performance with a pencil-beam pattern. The radiating slots were milled in the narrow wall of a WR-284 waveguide. The simulated result shows that the proposed antenna operates in the S-band frequency. The gain of the antenna is 42 dBi, with a vertical and horizontal beamwidth of 1.3° and 0.4°, respectively. All these results suggest that the antenna is suitable for ground-controlled interception (GCI) Radar.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127174039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650345
Muliani P. Lia, J. Hidayat, N. Nursam, Shobih, E. Rosa
A monolithic dye-sensitized solar cell (DSC) module with a low temperature carbon based counter electrode has been fabricated using screen printing technique. Each monolithic DSC consists of a layer of TiO2 and dye molecules as working electrode, ZrO2 spacer layer and a counter electrode. The design of the module itself contains seven monolithic gridtype cells that were internally integrated in series connection with a total active area of 70 cm2. In this work, the electrical performance of the module was analyzed through the measurement of the current-voltage (I-V) characteristics. The monolithic DSC module obtained a photoconversion efficiency of 0.36 % with a short-circuit current of 13.52 mA, an opencircuit voltage of 4.05 V, and a power output of 12.52 mW. The stability of the module was studied by repeating the measurement after 20 days, and the results showed a significant decrease in the electrical performance. Further research related to the sealing technique is therefore required to address the stability issue.
{"title":"Fabrication and Electrical Performance of Monolithic Dye-sensitized Solar Module with Low-Temperature Carbon-based Counter Electrode","authors":"Muliani P. Lia, J. Hidayat, N. Nursam, Shobih, E. Rosa","doi":"10.1109/ICRAMET53537.2021.9650345","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650345","url":null,"abstract":"A monolithic dye-sensitized solar cell (DSC) module with a low temperature carbon based counter electrode has been fabricated using screen printing technique. Each monolithic DSC consists of a layer of TiO2 and dye molecules as working electrode, ZrO2 spacer layer and a counter electrode. The design of the module itself contains seven monolithic gridtype cells that were internally integrated in series connection with a total active area of 70 cm2. In this work, the electrical performance of the module was analyzed through the measurement of the current-voltage (I-V) characteristics. The monolithic DSC module obtained a photoconversion efficiency of 0.36 % with a short-circuit current of 13.52 mA, an opencircuit voltage of 4.05 V, and a power output of 12.52 mW. The stability of the module was studied by repeating the measurement after 20 days, and the results showed a significant decrease in the electrical performance. Further research related to the sealing technique is therefore required to address the stability issue.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128100961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650507
Lia Aprilia, Tatsuya Meguro, T. Tabei, H. Mimura, S. Kuroki
This paper discussed a releasing process of microcantilever from silicon-on-insulator (SOI) wafer by a wet etching method, which is popular in semiconductor technology. A brace oxide in the cantilever was applied to prevent the beam from bending upwards during releasing process. The planar molybdenum (Mo) mask obtained by the etch-back process covered the cantilever structure with a Mo resistor from tetramethylammonium hydroxide (TMAH) etchant. As a result, the microcantilever structure with a Mo resistor could be released without crack and kept maintaining the Mo resistor’s electrical stability. These results open up the possibility of utilizing the BOX brace combined with the planar Mo layer to prevent damages in the cantilever during fabrication with anisotropic silicon etching using TMAH.
{"title":"Controlled Release of Microcantilever from a Silicon-on-Insulator Wafer with Oxide Brace","authors":"Lia Aprilia, Tatsuya Meguro, T. Tabei, H. Mimura, S. Kuroki","doi":"10.1109/ICRAMET53537.2021.9650507","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650507","url":null,"abstract":"This paper discussed a releasing process of microcantilever from silicon-on-insulator (SOI) wafer by a wet etching method, which is popular in semiconductor technology. A brace oxide in the cantilever was applied to prevent the beam from bending upwards during releasing process. The planar molybdenum (Mo) mask obtained by the etch-back process covered the cantilever structure with a Mo resistor from tetramethylammonium hydroxide (TMAH) etchant. As a result, the microcantilever structure with a Mo resistor could be released without crack and kept maintaining the Mo resistor’s electrical stability. These results open up the possibility of utilizing the BOX brace combined with the planar Mo layer to prevent damages in the cantilever during fabrication with anisotropic silicon etching using TMAH.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131847958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The scheme of the RFID Authentication Encryption Protocol Without Tag Anonymity (RAP-WOTA) protocol was introduced by Rajaguru K. et al. in 2018. This protocol is claimed to provide message confidentiality, message authentication, tag anonymity, de-synchronization, mutual authentication, and forward secrecy. Syafrilah et al. found a vulnerability in the RAP-WOTA protocol and modified it by adding a timestamp, which has been tested to overcome the vulnerability. However, its use in actual hardware has never been carried out in further research. Access control is very important because it is one of the first lines of defense in the fight against unauthorized access to systems. To access a room with a high level of security, in addition to user authentication, authentication of access control devices is also required. Therefore, in this study, the implementation of the modified RAP-WOTA protocol with timestamp was carried out to verify that the protocol could be applied to RFID devices for room access control. From the results of the implementation, the average protocol processing time is 27.16 seconds. The maximum communication is 140 cm. Also, this protocol is proven safe from replay attacks.
{"title":"Access Control Prototype using Modified RAP-WOTA with Timestamp Protocol Based on Arduino Mega 2560","authors":"Nia Hindarsih, Dwi Novazrianto, Fauzan Budi Setiawan, Esa Egistian Hartadi, Rizka Khairunnisa","doi":"10.1109/ICRAMET53537.2021.9650469","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650469","url":null,"abstract":"The scheme of the RFID Authentication Encryption Protocol Without Tag Anonymity (RAP-WOTA) protocol was introduced by Rajaguru K. et al. in 2018. This protocol is claimed to provide message confidentiality, message authentication, tag anonymity, de-synchronization, mutual authentication, and forward secrecy. Syafrilah et al. found a vulnerability in the RAP-WOTA protocol and modified it by adding a timestamp, which has been tested to overcome the vulnerability. However, its use in actual hardware has never been carried out in further research. Access control is very important because it is one of the first lines of defense in the fight against unauthorized access to systems. To access a room with a high level of security, in addition to user authentication, authentication of access control devices is also required. Therefore, in this study, the implementation of the modified RAP-WOTA protocol with timestamp was carried out to verify that the protocol could be applied to RFID devices for room access control. From the results of the implementation, the average protocol processing time is 27.16 seconds. The maximum communication is 140 cm. Also, this protocol is proven safe from replay attacks.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116935180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650466
Rohit Lahiri, G. Anand, Asmita Singhal
Engineering and design of compact suspended substrate strip-line based inter-digital band-pass filter design is discussed here. The key challenge brought out in this paper is to design a highly selective filter in Ku band in a compact form factor that is used in wideband RF front-end receivers. This paper discusses the design, development and realization of the Ku band (14–18 GHz) band pass filter (BPF). The realized filter offers > 60 dB and > 80 dB rejections at 10% and 15% away from the band edge. Also, passband insertion loss practically achieved is < 3.3 dB with return losses > 10 dB in passband. The design is carried out on 5 mils soft substrate. The realized filter is housed in a compact size measuring 2.0 x 1.5 cm2. Also, the measured results are in excellent agreement with the simulated results.
{"title":"Novel Engineering and Design of Compact SSS Based Highly Selective Inter-digital Ku Band BPF","authors":"Rohit Lahiri, G. Anand, Asmita Singhal","doi":"10.1109/ICRAMET53537.2021.9650466","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650466","url":null,"abstract":"Engineering and design of compact suspended substrate strip-line based inter-digital band-pass filter design is discussed here. The key challenge brought out in this paper is to design a highly selective filter in Ku band in a compact form factor that is used in wideband RF front-end receivers. This paper discusses the design, development and realization of the Ku band (14–18 GHz) band pass filter (BPF). The realized filter offers > 60 dB and > 80 dB rejections at 10% and 15% away from the band edge. Also, passband insertion loss practically achieved is < 3.3 dB with return losses > 10 dB in passband. The design is carried out on 5 mils soft substrate. The realized filter is housed in a compact size measuring 2.0 x 1.5 cm2. Also, the measured results are in excellent agreement with the simulated results.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124644863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650463
Rifki Fathurrahman, Umaisaroh Umaisaroh, M. Alaydrus
5G technology is a new wireless communication system that supports a high data transfer rate with wide bandwidths. One type of antenna that can support these needs is the reflectarray antenna. Reflectarray antennas are designed for adjusting the phase of electromagnetic waves by their array elements to obtain higher gain. This study aims to design a reflectarray with 196 ring-loaded elements in a 14 × 14 array that works at 28 GHz. Simulation and fabrication used a Koch patch model with zeroth iteration as a feed antenna resulting in a gain of 6.59 dBi.
{"title":"Design of Reflectarray Antenna with Ring-Loaded Patches for 5G Applications","authors":"Rifki Fathurrahman, Umaisaroh Umaisaroh, M. Alaydrus","doi":"10.1109/ICRAMET53537.2021.9650463","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650463","url":null,"abstract":"5G technology is a new wireless communication system that supports a high data transfer rate with wide bandwidths. One type of antenna that can support these needs is the reflectarray antenna. Reflectarray antennas are designed for adjusting the phase of electromagnetic waves by their array elements to obtain higher gain. This study aims to design a reflectarray with 196 ring-loaded elements in a 14 × 14 array that works at 28 GHz. Simulation and fabrication used a Koch patch model with zeroth iteration as a feed antenna resulting in a gain of 6.59 dBi.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133439418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650472
Rivo Try Anjasmara, A. A. Pramudita, Y. Wahyu
Radar has many implementations in everyday life in various fields such as the military, health and many more. Radar has also been developed so that it could be combined with other technologies. For example, the human to machine interface (HMI). HMI has the ability to translate cues from the user so that it could be understood by the machine. Based on their respective capabilities, radar and HMI then combined so that they could get new capabilities based on their respective functions. One type of radar that is known is the continuous wave (CW) radar. CW radar is generally used to detect objects based on the Doppler effect. Then CW radar combined with HMI. The results obtained by using a multi-sensor configuration, namely horizontal and vertical configurations could detect hand movements. The horizontal and vertical configurations could both detect with an accuracy rate of 87.5 % of the test in each configuration with a distance of 20 cm in terms of power and measurement accuracy. So, it could be concluded that using a multi-sensor configuration in the form of horizontal and vertical could detect hand gesture movements.
{"title":"Configuration of Multisensor CW Radar for Hand Gesture Detection","authors":"Rivo Try Anjasmara, A. A. Pramudita, Y. Wahyu","doi":"10.1109/ICRAMET53537.2021.9650472","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650472","url":null,"abstract":"Radar has many implementations in everyday life in various fields such as the military, health and many more. Radar has also been developed so that it could be combined with other technologies. For example, the human to machine interface (HMI). HMI has the ability to translate cues from the user so that it could be understood by the machine. Based on their respective capabilities, radar and HMI then combined so that they could get new capabilities based on their respective functions. One type of radar that is known is the continuous wave (CW) radar. CW radar is generally used to detect objects based on the Doppler effect. Then CW radar combined with HMI. The results obtained by using a multi-sensor configuration, namely horizontal and vertical configurations could detect hand movements. The horizontal and vertical configurations could both detect with an accuracy rate of 87.5 % of the test in each configuration with a distance of 20 cm in terms of power and measurement accuracy. So, it could be concluded that using a multi-sensor configuration in the form of horizontal and vertical could detect hand gesture movements.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123873804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650480
N. Nursam, E. Widianto, Yuliar Firdaus
The performance of methylammonium lead iodide (MAPbI3)-based perovskite solar cells (PSCs) with carbon back electrode and various organic or inorganic hole transport materials (HTMs), i.e., spiro-OMeTAD, graphene oxide (GO), and copper(I) thiocyanate (CuSCN), have been investigated and optimized using SCAPS-ID device simulation software. Herein, carbon was selected as the back contact due to its potential as a low-cost electrode that has comparable work function with metals. A planar structure comprising a transparent conductive electrode/TiO2/MAPbI3/HTM/carbon was used. We specifically analyze the effect of HTM parameters, such as HTM thickness and interface defect at the HTMs/perovskite interface, on the electrical performance of the perovskite solar cells. After optimizing the above parameters, a power conversion efficiency (PCE) of 12.13%, 19.51%, 16.34%, and 20.23% was obtained for the solar cell with no-HTM, spiro-OMeTAD, GO, and CuSCN, respectively. These results showcase the potential of employing GO and CuSCN as HTM in providing alternatives to the high cost and moisture-sensitive spiro-OMeTAD for obtaining perovskite solar cells with high efficiency.
{"title":"Numerical Simulations of MAPbI3-based Perovskite Solar Cells with Carbon Back Contact and Various Hole Transport Materials","authors":"N. Nursam, E. Widianto, Yuliar Firdaus","doi":"10.1109/ICRAMET53537.2021.9650480","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650480","url":null,"abstract":"The performance of methylammonium lead iodide (MAPbI3)-based perovskite solar cells (PSCs) with carbon back electrode and various organic or inorganic hole transport materials (HTMs), i.e., spiro-OMeTAD, graphene oxide (GO), and copper(I) thiocyanate (CuSCN), have been investigated and optimized using SCAPS-ID device simulation software. Herein, carbon was selected as the back contact due to its potential as a low-cost electrode that has comparable work function with metals. A planar structure comprising a transparent conductive electrode/TiO2/MAPbI3/HTM/carbon was used. We specifically analyze the effect of HTM parameters, such as HTM thickness and interface defect at the HTMs/perovskite interface, on the electrical performance of the perovskite solar cells. After optimizing the above parameters, a power conversion efficiency (PCE) of 12.13%, 19.51%, 16.34%, and 20.23% was obtained for the solar cell with no-HTM, spiro-OMeTAD, GO, and CuSCN, respectively. These results showcase the potential of employing GO and CuSCN as HTM in providing alternatives to the high cost and moisture-sensitive spiro-OMeTAD for obtaining perovskite solar cells with high efficiency.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121262700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650457
Ankita Mehrotra, Sanjeev Gupta
A detailed study of the first subsystem of a receiver, i.e., Low Noise Amplifier (LNA) for Satellite and Cellular System Application, is presented using 0.25 μm GaAs pHEMT process from United Monolithic Semiconductors (UMS). The proposed three-stage cascaded LNA covers a 20-30 GHz frequency range corresponding to a fractional bandwidth of 60 %. This design exhibits gain better than 22 dB with less than 2.6 dB minimum noise Figure (NFm) in the complete frequency range. The input and output return losses are better than 10 dB. The results presented in this paper are only simulated using ADS and are planned to be fabricated in the future. As per the literature available, this design has achieved a maximally flat gain response for a wide range of frequencies, and also the other performance specifications are among the best reported up-till now with minimal components using the similar 0.25 μm GaAs process in this frequency range.
{"title":"Design and Analysis of a Broadband Low Noise Amplifier using 0.25 μm GaAs pHEMT Process","authors":"Ankita Mehrotra, Sanjeev Gupta","doi":"10.1109/ICRAMET53537.2021.9650457","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650457","url":null,"abstract":"A detailed study of the first subsystem of a receiver, i.e., Low Noise Amplifier (LNA) for Satellite and Cellular System Application, is presented using 0.25 μm GaAs pHEMT process from United Monolithic Semiconductors (UMS). The proposed three-stage cascaded LNA covers a 20-30 GHz frequency range corresponding to a fractional bandwidth of 60 %. This design exhibits gain better than 22 dB with less than 2.6 dB minimum noise Figure (NFm) in the complete frequency range. The input and output return losses are better than 10 dB. The results presented in this paper are only simulated using ADS and are planned to be fabricated in the future. As per the literature available, this design has achieved a maximally flat gain response for a wide range of frequencies, and also the other performance specifications are among the best reported up-till now with minimal components using the similar 0.25 μm GaAs process in this frequency range.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126601325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-23DOI: 10.1109/ICRAMET53537.2021.9650475
Doğancan Turt, A. Akgiray
This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed’s CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- & source-pull simulations are conducted. After load- & source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.
{"title":"Broadband High Power Amplifier Design Using GaN HEMT Technology","authors":"Doğancan Turt, A. Akgiray","doi":"10.1109/ICRAMET53537.2021.9650475","DOIUrl":"https://doi.org/10.1109/ICRAMET53537.2021.9650475","url":null,"abstract":"This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed’s CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- & source-pull simulations are conducted. After load- & source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.","PeriodicalId":269759,"journal":{"name":"2021 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127877417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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