B. Kumari, Rahul Kumar, Manodipan Sahoo, Rohit Sharma
{"title":"Performance Analysis of Self Heated Multilayer Vertical Graphene Nanoribbon Interconnects","authors":"B. Kumari, Rahul Kumar, Manodipan Sahoo, Rohit Sharma","doi":"10.1109/ECTC32696.2021.00256","DOIUrl":null,"url":null,"abstract":"In this paper, we report qualitative comparative signal integrity analysis of self-heated Ferric Chloride ($FeCl_{3}$) doped Top Contacted Multilayer Vertical Graphene Nanoribbon (TC-MLVGNR) interconnect and its comparison with copper and $FeCl_{3}$ doped Top Contacted Multilayer Horizontal Graphene Nanoribbon (TC-MLHGNR) interconnects. A coupled three-line interconnect system is utilized in this study. The dimensions of interconnects are taken as per the IRDS-2018 roadmap for 7nm technology node. In realistic scenario, roughness is present on interconnect surfaces and it plays a major role at lower technology nodes. Roughness is inevitable during the fabrication process. It helps to provide the adhesion between dielectric and interconnect. So to capture the realistic scenario, we are considering rough Multilayer Graphene Nanoribbon (MLGNR) interconnects to compare with conventional rough copper interconnects. When compared to rough copper, smooth copper and TC-MLHGNR interconnects, delay of TC-MLVGNR interconnect is reduced by 59%, 51% and 62%, respectively. Even if we consider self-heating, its performance is better than rough copper, smooth copper and TC-MLHGNR interconnects by 26%, 11% and 54%, respectively. It is worth noting that rough TC-MLHGNRs induce the highest delay especially when self-heating effect is considered. Also, this study proves that TC-MLVGNR interconnects outperform TC-MLHGNR interconnects in terms of thermal efficiency by 15% thus making it a potential interconnect candidate for ultra-scaled technology nodes.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we report qualitative comparative signal integrity analysis of self-heated Ferric Chloride ($FeCl_{3}$) doped Top Contacted Multilayer Vertical Graphene Nanoribbon (TC-MLVGNR) interconnect and its comparison with copper and $FeCl_{3}$ doped Top Contacted Multilayer Horizontal Graphene Nanoribbon (TC-MLHGNR) interconnects. A coupled three-line interconnect system is utilized in this study. The dimensions of interconnects are taken as per the IRDS-2018 roadmap for 7nm technology node. In realistic scenario, roughness is present on interconnect surfaces and it plays a major role at lower technology nodes. Roughness is inevitable during the fabrication process. It helps to provide the adhesion between dielectric and interconnect. So to capture the realistic scenario, we are considering rough Multilayer Graphene Nanoribbon (MLGNR) interconnects to compare with conventional rough copper interconnects. When compared to rough copper, smooth copper and TC-MLHGNR interconnects, delay of TC-MLVGNR interconnect is reduced by 59%, 51% and 62%, respectively. Even if we consider self-heating, its performance is better than rough copper, smooth copper and TC-MLHGNR interconnects by 26%, 11% and 54%, respectively. It is worth noting that rough TC-MLHGNRs induce the highest delay especially when self-heating effect is considered. Also, this study proves that TC-MLVGNR interconnects outperform TC-MLHGNR interconnects in terms of thermal efficiency by 15% thus making it a potential interconnect candidate for ultra-scaled technology nodes.