{"title":"Impact of air exposure on physical properties of sputter-deposited undoped ZnO films","authors":"N. Takahashi, J. Zhang, Y. Omura, T. Saitoh","doi":"10.1109/IMFEDK.2016.7521679","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the impact of exposing undoped ZnO films to the air. Lateral resistance of ZnO films annealed in O2 ambient increases with the time spent and then decreases at over one hundreds hours, while that of ZnO films annealed in N2 ambient is almost insensitive to such exposure.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper demonstrates the impact of exposing undoped ZnO films to the air. Lateral resistance of ZnO films annealed in O2 ambient increases with the time spent and then decreases at over one hundreds hours, while that of ZnO films annealed in N2 ambient is almost insensitive to such exposure.
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