X. Federspiel, M. Rafik, M. Arabi, A. Cros, F. Cacho
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引用次数: 3
Abstract
non uniform field TTDB stress have been performed on 28nm FDSOI MOSfet devices. After analysis of thermal effects under increasing drain voltage, as well as potential TDDB-HCI interactions, a complete TTDB model, taking into account non uniform field and self-heating is confronted to experimental data.
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