Pub Date : 2018-10-01DOI: 10.1109/IIRW.2018.8727082
Dann Morillon, P. Masson, F. Julien, P. Lorenzini, Jérôme Goy, C. Pribat, O. Gourhant, T. Kempf, J. Ogier, A. Villaret, G. Ghezzi, N. Cherault, S. Niel
In this paper, the reliability of thick SiO2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanisms and switching states generation occurring during stress at high electric fields. Measurements are performed on furnace grown and HTO-based oxides and the correlation with lifetimes extrapolated from time-dependent dielectric breakdown is discussed.
{"title":"Gate oxide degradation assessment by electrical stress and capacitance measurements","authors":"Dann Morillon, P. Masson, F. Julien, P. Lorenzini, Jérôme Goy, C. Pribat, O. Gourhant, T. Kempf, J. Ogier, A. Villaret, G. Ghezzi, N. Cherault, S. Niel","doi":"10.1109/IIRW.2018.8727082","DOIUrl":"https://doi.org/10.1109/IIRW.2018.8727082","url":null,"abstract":"In this paper, the reliability of thick SiO2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanisms and switching states generation occurring during stress at high electric fields. Measurements are performed on furnace grown and HTO-based oxides and the correlation with lifetimes extrapolated from time-dependent dielectric breakdown is discussed.","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124683309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/IIRW.2018.8727077
R. J. Waskiewicz, E. Frantz, P. Lenahan, S. King, N. Harmon, M. Flatté
Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.
{"title":"Identifying Defects Responsible For Leakage Currents in Thin Dielectric Films","authors":"R. J. Waskiewicz, E. Frantz, P. Lenahan, S. King, N. Harmon, M. Flatté","doi":"10.1109/IIRW.2018.8727077","DOIUrl":"https://doi.org/10.1109/IIRW.2018.8727077","url":null,"abstract":"Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133843850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/iirw.2018.8727105
{"title":"Discussion group summary: Emerging reliability issues in advanced RF SOI technologies for 5G applications","authors":"","doi":"10.1109/iirw.2018.8727105","DOIUrl":"https://doi.org/10.1109/iirw.2018.8727105","url":null,"abstract":"","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124720196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/iirw.2018.8727071
{"title":"Joint Discussion Groups – Summary: DG III: Automotive Reliability within a new ecosystem DG IV: The use of t0.1 methodology for HC and BTI during the L1 technology qualification phase","authors":"","doi":"10.1109/iirw.2018.8727071","DOIUrl":"https://doi.org/10.1109/iirw.2018.8727071","url":null,"abstract":"","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/IIRW.2018.8727101
J. Trommer, V. Havel, T. Chohan, F. Mehmood, S. Slesazeck, G. Krause, G. Bossu, W. Arfaoui, Armin Muhlhoff, T. Mikolajick
The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on the circuit level. The direct analysis of circuit level reliability is therefore an essential task for hardware qualification in the near future. Ring oscillators (RO) offer a good model system, where both BTI and HCI contribute to the degradation. In this work, it is qualitatively shown that the additional off-state stress plays a crucial role at very high stress voltages, beyond upper usage boundaries. To yield an accurate RO lifetime prediction a frequency measurement setup with high resolution is used, which can resolve small changes in frequency during stress near operation conditions. An ACDC conversion model is developed predicting the resulting frequency change based on DC input data. From the extrapolation to 10 years of circuit lifetime the model predicts a very low frequency degradation below 0.2% under nominal operation conditions, where the off-state has a minor influence.
{"title":"Off-state Impact on FDSOI Ring Oscillator Degradation under High Voltage Stress","authors":"J. Trommer, V. Havel, T. Chohan, F. Mehmood, S. Slesazeck, G. Krause, G. Bossu, W. Arfaoui, Armin Muhlhoff, T. Mikolajick","doi":"10.1109/IIRW.2018.8727101","DOIUrl":"https://doi.org/10.1109/IIRW.2018.8727101","url":null,"abstract":"The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on the circuit level. The direct analysis of circuit level reliability is therefore an essential task for hardware qualification in the near future. Ring oscillators (RO) offer a good model system, where both BTI and HCI contribute to the degradation. In this work, it is qualitatively shown that the additional off-state stress plays a crucial role at very high stress voltages, beyond upper usage boundaries. To yield an accurate RO lifetime prediction a frequency measurement setup with high resolution is used, which can resolve small changes in frequency during stress near operation conditions. An ACDC conversion model is developed predicting the resulting frequency change based on DC input data. From the extrapolation to 10 years of circuit lifetime the model predicts a very low frequency degradation below 0.2% under nominal operation conditions, where the off-state has a minor influence.","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"178 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/IIRW.2018.8727100
R. Shah, F. Cacho, R. Lajmi, L. Anghel
Handling process, voltage, temperature and aging variations have become an important challenge for advanced technology nodes to guarantee good performance. It is important to capture PVTA variations very accurately, in that context in-situ monitor captures both local and global variations accurately as they are placed inside the design at the end of critical paths. This paper presents the experimental results and analysis of aging with the help of in-situ monitor across different dies. Critical path ranking and slack modification due to aging effect and different supply voltage are analyzed. Compensation of aging through body-bias applied on PMOS and NMOS is discussed.
{"title":"Aging Investigation of Digital Circuit using In-Situ Monitor","authors":"R. Shah, F. Cacho, R. Lajmi, L. Anghel","doi":"10.1109/IIRW.2018.8727100","DOIUrl":"https://doi.org/10.1109/IIRW.2018.8727100","url":null,"abstract":"Handling process, voltage, temperature and aging variations have become an important challenge for advanced technology nodes to guarantee good performance. It is important to capture PVTA variations very accurately, in that context in-situ monitor captures both local and global variations accurately as they are placed inside the design at the end of critical paths. This paper presents the experimental results and analysis of aging with the help of in-situ monitor across different dies. Critical path ranking and slack modification due to aging effect and different supply voltage are analyzed. Compensation of aging through body-bias applied on PMOS and NMOS is discussed.","PeriodicalId":365267,"journal":{"name":"2018 International Integrated Reliability Workshop (IIRW)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116940526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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