Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures

Abstract

The vertical leakage current of AlGaN/GaN high-electron-mobility transistors on Si substrates was studied. The effects of the Al content in the AlGaN buffer layer and pit density on the vertical leakage current were not as significant as the effect of the initial AlN layer's crystal quality.