A. Venugopal, J. Chan, W. Kirk, L. Colombo, E. Vogel
{"title":"The effect of field effect device channel dimensions on the effective mobility of graphene","authors":"A. Venugopal, J. Chan, W. Kirk, L. Colombo, E. Vogel","doi":"10.1109/DRC.2011.5994424","DOIUrl":null,"url":null,"abstract":"Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, residue from processing, charged impurity scattering and phonon scattering [3]. In most previous studies one of the primary assumptions made is that the mobility is independent of channel dimensions. In this study, we performed room temperature effective mobility measurements as a function of channel dimensions. The mobility exhibits clear channel length (Lch) and width (Wch) dependence and varies from less than 1,000 cm2/V·s to 7,000 cm2/V·s. Theoretical analysis of the conductivity (σ) in graphene devices as a function of Wch performed by Vasko et al [4]. is in agreement with our experimental results. Mobility values for back gated devices with well defined channel dimensions in literature [5] are seen to be consistent with the trend that we report here.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, residue from processing, charged impurity scattering and phonon scattering [3]. In most previous studies one of the primary assumptions made is that the mobility is independent of channel dimensions. In this study, we performed room temperature effective mobility measurements as a function of channel dimensions. The mobility exhibits clear channel length (Lch) and width (Wch) dependence and varies from less than 1,000 cm2/V·s to 7,000 cm2/V·s. Theoretical analysis of the conductivity (σ) in graphene devices as a function of Wch performed by Vasko et al [4]. is in agreement with our experimental results. Mobility values for back gated devices with well defined channel dimensions in literature [5] are seen to be consistent with the trend that we report here.