S. Fu, S. Park, Y. Hsin, M. Ho, T. Chin, P. Yu, C. Tu, P. Asbeck
{"title":"GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base","authors":"S. Fu, S. Park, Y. Hsin, M. Ho, T. Chin, P. Yu, C. Tu, P. Asbeck","doi":"10.1109/DRC.1994.1009428","DOIUrl":null,"url":null,"abstract":"A key research need for future III-V HBTs is to reduce device dimensions, while minimizing emitter edge recombination and parasitic capacitances. This paper presents a novel HBT structure based on multiple epitaxial growths well suited for such scaling. These are the first HBTs made with selectively grown GaInP emitters, the first made with widebandgap GaInP extrinsic base regions, and the first to use sidewall spacers to reduce emitter width from photolithographic dimensions.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A key research need for future III-V HBTs is to reduce device dimensions, while minimizing emitter edge recombination and parasitic capacitances. This paper presents a novel HBT structure based on multiple epitaxial growths well suited for such scaling. These are the first HBTs made with selectively grown GaInP emitters, the first made with widebandgap GaInP extrinsic base regions, and the first to use sidewall spacers to reduce emitter width from photolithographic dimensions.
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