Vertical transport in InAs/GaSb type-II superlattices

Abstract

In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T. It is shown that at room temperature the sample conductivity is due to four distinct carriers, associated with the majority carrier holes, side-wall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.