275 GHz f/sub MAX/, 220 GHz f/sub T/ AlSb/InAs HEMT technology

Abstract

In this paper, we report record AlSb/InAs HEMT high frequency gain performance up to 275 GHz f/sub MAX/. The 0.1-/spl mu/m gate length and 80-/spl mu/m total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated f/sub T/ and f/sub MAX/ performance of 220 and 275 GHz, respectively, at a drain voltage of 0.5 V and drain current of 27 mA. To the best of our knowledge, this is the highest reported f/sub MAX/ and high-frequency available gain reported for InAs-channel HEMTs. Furthermore, it is first AlSb/InAs HEMT result that has achieved f/sub MAX/ greater than f/sub T/, which clearly demonstrates that this approach is not intrinsically limited in regards to achieving high frequency and high-gain characteristics.