A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters

Gian Piero Gibiino, A. Santarelli, F. Filicori
{"title":"A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters","authors":"Gian Piero Gibiino, A. Santarelli, F. Filicori","doi":"10.23919/EUMIC.2018.8539947","DOIUrl":null,"url":null,"abstract":"A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% − 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
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基于多偏置s参数的GaN HEMT电荷函数提取方法
提出了一种gan - hemt的电荷函数识别方法。这是基于从多偏置s参数提取的辅助模型获得的位移电流波形的频域积分。该方法与最近提出的一种类似技术进行了比较,该技术是基于非线性矢量网络分析仪(NVNA)在晶体管端口直接采集大信号波形。通过使用1mm的GaN-on-SiC HEMT,对两种方法进行了比较,得出结论:电荷上的热和阱诱导色散对位移电流预测的影响量化为~ 4% - 18%的归一化均方误差,具体取决于所考虑的波形。
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