Hydrothermally Deposited Antimony Sulfide Solar Cells with $\mathrm{V}_{\text{OC}}$ Approaching 800 mV

Dipendra Pokhrel, Nini Rose Mathew, Suman Rijal, Ebin Bastola, Abasi Abudulimu, Tamanna Mariam, X. Mathew, A. Phillips, M. Heben, Zhaoning Song, Yanfa Yan, R. Ellingson
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Abstract

Antimony sulfide $(\text{Sb}_{2}\mathrm{S}_{3})$ represents an emerging thin-film photovoltaic light-absorber, with potential as a wide gap top cell for high-efficiency tandem devices. Here, we report the development and characterization of $\text{Sb}_{2}\mathrm{S}_{3}$ absorber layers prepared by the hydrothermal method. Completed devices based on chemical bath deposited cadmium sulfide (CdS) and Spiro-OMeTAD as the electron-and hole-transport layers, respectively, have yielded promising power conversion efficiencies as high as 5.5 %. Although the typical deficit reported between the Sb ${}_{2}\mathrm{S}_{3}$ bandgap energy and the open-circuit voltage $(\mathrm{V}_{\text{OC}})$ remains high, we report high Voc values approaching 800 mV.
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$\ mathm {V}_{\text{OC}}$接近800 mV的水热沉积硫化锑太阳能电池
硫化锑$(\text{Sb}_{2}\ maththrm {S}_{3})$代表了一种新兴的薄膜光伏光吸收剂,具有作为高效串接器件的宽间隙顶电池的潜力。本文报道了用水热法制备的$\text{Sb}_{2}\ maththrm {S}_{3}$吸收层的研制和表征。基于化学浴沉积的硫化镉(CdS)和Spiro-OMeTAD分别作为电子和空穴传输层的完整器件已经产生了高达5.5%的有希望的功率转换效率。虽然Sb ${}_{2}\mathrm{S}_{3}$带隙能量与开路电压$(\mathrm{V}_{\text{OC}})$之间的典型亏损仍然很高,但我们报告了接近800 mV的高Voc值。
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