D. Lo, G. Dow, S. Chen, H. Wang, T. Ton, K. Tan, B. Allen
{"title":"A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA]","authors":"D. Lo, G. Dow, S. Chen, H. Wang, T. Ton, K. Tan, B. Allen","doi":"10.1109/GAAS.1993.394451","DOIUrl":null,"url":null,"abstract":"The authors report a monolithic 1/spl times/2 W-band four-stage low noise amplifier array based on 0.1 /spl mu/m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology for applications in W-band phased array antennas or focal plane imaging array. The amplifiers have achieved an average gain of 19 dB over the band from 77 to 100 GHz and a noise figure of 5-6 dB from 92 to 96 GHz. Crosstalk between the amplifiers in the 1/spl times/2 array is less than -25 dB from 80 to 100 GHz. Successful demonstration of this high level integrated MMIC indicates the maturity of 0.1 /spl mu/m GaAs-based HEMT technology and the feasiblity of high density monolithic integration of array or multifunction chips for future low cost and compact millimeter wave systems.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The authors report a monolithic 1/spl times/2 W-band four-stage low noise amplifier array based on 0.1 /spl mu/m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology for applications in W-band phased array antennas or focal plane imaging array. The amplifiers have achieved an average gain of 19 dB over the band from 77 to 100 GHz and a noise figure of 5-6 dB from 92 to 96 GHz. Crosstalk between the amplifiers in the 1/spl times/2 array is less than -25 dB from 80 to 100 GHz. Successful demonstration of this high level integrated MMIC indicates the maturity of 0.1 /spl mu/m GaAs-based HEMT technology and the feasiblity of high density monolithic integration of array or multifunction chips for future low cost and compact millimeter wave systems.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
