Diamond and cubic boron nitride: synthesis and electronic applications

I. Bello, W.J. Zhang, K. Chan, C. Chan, Y. Wu, F. Meng, C. Lam, J. Liu, W. Y. Luk
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引用次数: 5

Abstract

This paper reviews recent progress in the deposition of diamond and cubic boron nitride (cBN) films. It aims at the effort of preparing smooth surfaces, improving crystallinity and enhancing adhesion of diamond and cBN films. The properties of these materials, multi-stage growth processes and difference in synthesis of diamond and cBN films are discussed. Resolving the nucleation and growth stages, deposition at different temperatures, post deposition treatment, possible chemistry, and the mechanisms behind are introduced as well. We report the most striking results achieved in our laboratories including the deposition of thin smooth oriented diamond film with coalescent diamond crystals and the deposition of thick cubic boron nitride films yielding well-resolved Raman spectra. The difference between the syntheses of polycrystalline and nano-crystalline diamond films are shown to be in gas phase environments. While the CH/sub 3/ radicals are responsible for the growth of polycrystalline films the CVD environment with abundant C/sub 2/ dimers results in the deposition of nanocrystalline diamond. Special attention deserves manufacturing single crystal diamond nanotips and their arrays. These single crystal diamond nano-lips have a very high aspect ratio, an apical angle of 28/spl deg/ and a radius of 5 nm. Finally, we present a review of potential and current applications of diamond in electronic areas.
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金刚石和立方氮化硼:合成和电子应用
本文综述了金刚石和立方氮化硼(cBN)薄膜沉积的最新进展。它的目的是努力制备光滑的表面,提高结晶度和增强金刚石和cBN薄膜的附着力。讨论了这些材料的性质、多阶段生长过程以及金刚石和cBN薄膜合成的差异。介绍了不同温度下的成核和生长阶段、沉积、沉积后处理、可能的化学反应及其机理。我们报告了在我们的实验室中取得的最引人注目的结果,包括沉积薄的光滑取向的金刚石薄膜与聚结金刚石晶体和厚立方氮化硼薄膜的沉积,产生良好的分辨拉曼光谱。多晶金刚石薄膜和纳米晶金刚石薄膜在气相环境下的合成存在差异。ch3 /sub - 3自由基是多晶膜生长的主要原因,而CVD环境中丰富的C/sub - 2/二聚体则是纳米金刚石的生长环境。单晶金刚石纳米尖及其阵列的制造值得特别关注。这些单晶金刚石纳米唇具有非常高的纵横比,顶点角为28/spl°/,半径为5 nm。最后,综述了金刚石在电子领域的应用前景和现状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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