D. Lin, Robert MacDonald, Dorin Calbaza, J. Popp, Tammy Johnson, E. Andarawis, M. Aimi
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引用次数: 2
Abstract
GE Research has developed a low-cost inertial MEMS process flow for navigation-grade inertial sensor fabrication called the ‘Polaris' process. With a total of six mask layers, GE Polaris features thick silicon on insulation (SOI) with a 20 to 200 µm device layer, 30:1 high aspect ratio etching, and wafer level vacuum sealing with through silicon via (TSV) technology. GE Polaris has demonstrated good TSV ohmic contact, good vacuum seal integrity, high wafer yield with good etch symmetry and uniformity, and proven navigation-grade performance with high temperature reliability. GE Polaris strives to provide the simplest MEMS PNT flow for quick prototyping and low-to-mid volume production.
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