J. Raoult, S. Jarrix, L. Chusseau, T. Maraine, J. Boch
{"title":"Highlight of Total Ionizing Dose Effects on RF Front-ends by means of Microwave Nonlinear Characterization","authors":"J. Raoult, S. Jarrix, L. Chusseau, T. Maraine, J. Boch","doi":"10.1109/radecs47380.2019.9745729","DOIUrl":null,"url":null,"abstract":"High frequency front-ends are X-ray irradiated in biased and unbiased configurations. The high-frequency nonlinear response of the integrated PAs and LNAs to harmonic and two-tone excitations are studied. The impact of the bias configuration with respect to irradiation is highlighted. Considering high frequency characterization, measurements of the reflected IM3 tone at the input as well as the power response to a single tone excitement are implemented. They are shown interesting tools for predicting dysfunctionalities in high frequency circuits with respect to TID.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High frequency front-ends are X-ray irradiated in biased and unbiased configurations. The high-frequency nonlinear response of the integrated PAs and LNAs to harmonic and two-tone excitations are studied. The impact of the bias configuration with respect to irradiation is highlighted. Considering high frequency characterization, measurements of the reflected IM3 tone at the input as well as the power response to a single tone excitement are implemented. They are shown interesting tools for predicting dysfunctionalities in high frequency circuits with respect to TID.
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