{"title":"A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m","authors":"R. Bugge, B. Fimland","doi":"10.1109/DRC.2005.1553035","DOIUrl":null,"url":null,"abstract":"A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction
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