Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

V. Di Giacomo-Brunel, E. Byk, C. Chang, J. Grünenpütt, B. Lambert, G. Mouginot, D. Sommer, H. Jung, M. Camiade, P. Fellon, D. Floriot, H. Blanck, J. Viaud
{"title":"Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band","authors":"V. Di Giacomo-Brunel, E. Byk, C. Chang, J. Grünenpütt, B. Lambert, G. Mouginot, D. Sommer, H. Jung, M. Camiade, P. Fellon, D. Floriot, H. Blanck, J. Viaud","doi":"10.23919/EUMIC.2018.8539905","DOIUrl":null,"url":null,"abstract":"This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - \\mu \\mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5–36 Ghz 9W HPA and a 15.5–18.5 GHz 20W HPA.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23

Abstract

This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a $0.15 - \mu \mathrm{m}$ gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5–36 Ghz 9W HPA and a 15.5–18.5 GHz 20W HPA.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
工业0.15-μm AlGaN/GaN在SiC技术上的应用高达Ka波段
本文介绍了UMS正在开发的新型GaN-on-SiC技术的主要特点。这项技术基于$0.15 - \mu \ maththrm {m}$的门长,目前正处于行业资格认证阶段,目标是在今年年底发布。已经成功设计的四个演示器中的两个也报告了新技术的结果:29.5-36 Ghz 9W HPA和15.5-18.5 Ghz 20W HPA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Multipurpose 76 GHz Radar Transceiver System for Automotive Applications Based on SiGe MMICs X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications 110–135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell Robust X-band GaN LNA with Integrated Active Limiter Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1