K. Seidel, D. Lehninger, F. Müller, Y. Raffel, A. Sünbül, Ricardo Revello, R. Hoffmann, S. De, T. Kämpfe, M. Lederer
{"title":"Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?","authors":"K. Seidel, D. Lehninger, F. Müller, Y. Raffel, A. Sünbül, Ricardo Revello, R. Hoffmann, S. De, T. Kämpfe, M. Lederer","doi":"10.1109/IMW56887.2023.10145945","DOIUrl":null,"url":null,"abstract":"In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and ITIC FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"46 6 Pt 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and ITIC FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.
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