V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, S. Piotrowicz, O. Jardel, J. Godin, P. Bove, M. Lijadi
{"title":"400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications","authors":"V. Nodjiadjim, M. Riet, A. Scavennec, P. Berdaguer, S. Piotrowicz, O. Jardel, J. Godin, P. Bove, M. Lijadi","doi":"10.1109/ICIPRM.2010.5515954","DOIUrl":null,"url":null,"abstract":"This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm<sup>2</sup> emitter size 4- and 8- finger devices demonstrated f<inf>T</inf> and f<inf>max</inf> above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm<sup>2</sup> two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5515954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm2 emitter size 4- and 8- finger devices demonstrated fT and fmax above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.
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