{"title":"Power HBT for 44 GHz operation","authors":"D. Deakin, W. Ho, E. Sovero, J. Higgins","doi":"10.1109/GAAS.1993.394431","DOIUrl":null,"url":null,"abstract":"The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
