{"title":"Simulation of hole transport in p-channel Si MOSFETs","authors":"S. Krishinan, D. Vasileska, M. Fischetti","doi":"10.1109/DRC.2005.1553070","DOIUrl":null,"url":null,"abstract":"Abstract. Electron transport in Si inversion layers has been the primary subject ofresearch for many years now [1], but hole transport has been relegated to the background mainly due to the highly complicated valence band-structure in Si. Hole transport is affected by the warping and anisotropy of the valence bands and the band-structure cannot be approximated with an effective mass picture or with an analytical band model. The advent of alternate device structures [2,3&4] aimed at boosting the speed and density ofVLSI circuits however, seems to have revived interest.","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Abstract. Electron transport in Si inversion layers has been the primary subject ofresearch for many years now [1], but hole transport has been relegated to the background mainly due to the highly complicated valence band-structure in Si. Hole transport is affected by the warping and anisotropy of the valence bands and the band-structure cannot be approximated with an effective mass picture or with an analytical band model. The advent of alternate device structures [2,3&4] aimed at boosting the speed and density ofVLSI circuits however, seems to have revived interest.