N. Pashkov, G. Navarro, J. Bastien, M. Suri, L. Perniola, V. Sousa, S. Maitrejean, A. Persico, A. Roule, A. Toffoli, G. Reimbold, B. De Salvo, O. Faynot, P. Zuliani, R. Annunziata
{"title":"Physical and electrical characterization of Germanium or Tellurium rich GexTe1−x for phase change memories","authors":"N. Pashkov, G. Navarro, J. Bastien, M. Suri, L. Perniola, V. Sousa, S. Maitrejean, A. Persico, A. Roule, A. Toffoli, G. Reimbold, B. De Salvo, O. Faynot, P. Zuliani, R. Annunziata","doi":"10.1109/ESSDERC.2011.6044227","DOIUrl":null,"url":null,"abstract":"This paper intends to provide an overview of electrical performances of GexTe1−x with different proportions of Germanium or Tellurium for phase-change memories. Germanium-rich as well as Tellurium-rich phase-change materials have been integrated in simple test devices and programming characteristics, data retention and endurance performances are thoroughly analyzed. Tellurium-rich GeTe alloys exhibit stable programming characteristics that can sustain endurance test up to 1e7 cycles, while Germanium-rich GeTe, probably triggered by Ge segregation, shows an unstable RESET state during repeated write/erase cycles. Data retention on fresh devices is best for out-of-stoichiometry GeTe.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper intends to provide an overview of electrical performances of GexTe1−x with different proportions of Germanium or Tellurium for phase-change memories. Germanium-rich as well as Tellurium-rich phase-change materials have been integrated in simple test devices and programming characteristics, data retention and endurance performances are thoroughly analyzed. Tellurium-rich GeTe alloys exhibit stable programming characteristics that can sustain endurance test up to 1e7 cycles, while Germanium-rich GeTe, probably triggered by Ge segregation, shows an unstable RESET state during repeated write/erase cycles. Data retention on fresh devices is best for out-of-stoichiometry GeTe.
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