{"title":"Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology","authors":"L. Pancheri, D. Stoppa","doi":"10.1109/ESSDERC.2011.6044205","DOIUrl":null,"url":null,"abstract":"Two different Single-Photon Avalanche Diode (SPAD) structures in a standard 0.15-nm CMOS technology are presented. A characterization of the two detectors, having a 10-μm active-area diameter, and monolithically integrated with a passive quenching circuit and a fast comparator is presented. The two devices exhibit respectively a typical dark count rate of 230cps and 160cps, an afterpulsing probability of 2.1% and 1.3% at 30ns dead time, a Photon Detection Probability of 31% and 26 % at λ=470nm and a timing resolution of 170ps and 60ps. The adopted technology is therefore promising for the realization of SPAD-based image sensors with good overall performance.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"62","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 62
Abstract
Two different Single-Photon Avalanche Diode (SPAD) structures in a standard 0.15-nm CMOS technology are presented. A characterization of the two detectors, having a 10-μm active-area diameter, and monolithically integrated with a passive quenching circuit and a fast comparator is presented. The two devices exhibit respectively a typical dark count rate of 230cps and 160cps, an afterpulsing probability of 2.1% and 1.3% at 30ns dead time, a Photon Detection Probability of 31% and 26 % at λ=470nm and a timing resolution of 170ps and 60ps. The adopted technology is therefore promising for the realization of SPAD-based image sensors with good overall performance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
