A comparator energy model considering shallow trench isolation stress by geometric programming

Gong Chen, Yu Zhang, Bo Yang, Qing Dong, S. Nakatake
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引用次数: 3

Abstract

In low power analog circuit designs, the current variation caused by the STI stress must be taken into account. In this paper, we address an energy trade-off related to the STI stress in the design of a comparator composed of the preamplifier and the conventional latch. The power consumption of the pre-amplifier can be formulated as a function of the diffusion length of MOSFETs when considering the STI stress. The longer diffusion length tends to make the power lower. On the other hand, the power to drive the latch is associated with the parasitic capacitance at the output of the pre-amplifier, so shorter diffusion is preferable. To cope with the trade-off, we provide the energy model of the comparator based on the geometric programming. In the post-layout HSPICE simulation with the STI BSIM model, we reveal that the impact of the STI stress on the energy becomes significant especially in low power designs.
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通过几何编程考虑浅沟隔离应力的比较器能量模型
在低功耗模拟电路设计中,必须考虑到 STI 应力引起的电流变化。在本文中,我们讨论了由前置放大器和传统锁存器组成的比较器设计中与 STI 应力有关的能量权衡问题。考虑到 STI 应力,前置放大器的功耗可表述为 MOSFET 扩散长度的函数。扩散长度越长,功耗越低。另一方面,驱动锁存器的功率与前置放大器输出端的寄生电容有关,因此扩散长度越短越好。为了权衡利弊,我们提供了基于几何编程的比较器能量模型。在利用 STI BSIM 模型进行的布局后 HSPICE 仿真中,我们发现 STI 应力对能量的影响非常显著,尤其是在低功耗设计中。
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