Ta-Yeh Lin, Shuw-Guann Lin, Yin-Cheng Chang, Chaoping Hsieh, D. Chang
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引用次数: 0
Abstract
In this paper, a stacked transition of substrate-integrated waveguide (SIW)-to-SIW using flip-chip assembly technology is designed to connect two integrated passive device (IPD) substrates. A through-hole via structure constructed by through silicon vias (TSVs) of the IPD and gold bumps is appropriately designed to greatly improve the impedance bandwidth and reduce insertion loss. The bandwidth of the stacked transition is from 108.5 to 158 GHz (37.2%), and the de-embedded insertion loss is 0.28 dB at 133 GHz.
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