Thermoelectric properties of small diameter Bi nanowires: Evidence for surface charges

T. Huber, A. Nikolaeva, D. Gitsu, L. Konopko, M. Graf
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Abstract

The thermoelectric properties of quasi-one-dimensional systems attract considerable attention. Semimetallic bismuth, aside from being a good thermoelectric material, has charge carriers with very low effective masses, and, as a result, electronic quantum confinement effects induce a semimetal-to-semiconductor transformation (SMSC) for wires with diameters below roughly 50 nm. Theoretical work based on one-dimensional models indicate that fine Bi wires may exhibit superior thermoelectric properties since the density of states at the Fermi level can be tuned to very high values in this case. However, angle-resolved photoemission spectroscopy (ARPES) studies of Bi surfaces have shown that Bi nanowires support surface states, with high carrier densities of around 5 times 1012 cm-2 and large effective mass, that have not been considered in current models of the SMSC. Our studies of Shubnikov-de Haas oscillations for 30-nm diameter Bi nanowires support this model. According to our estimates, the thermopower of this two dimensional sheet of charge should be observable and we carried out an experimental study of the thermopower of arrays of small diameter Bi nanowires to test these conflicting models of fine Bi nanowires
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小直径铋纳米线的热电特性:表面电荷的证据
准一维系统的热电性质引起了人们的广泛关注。半金属铋除了是一种良好的热电材料外,还具有非常低有效质量的载流子,因此,电子量子约束效应诱导直径小于约50纳米的金属线发生半金属到半导体的转变(SMSC)。基于一维模型的理论工作表明,由于在这种情况下费米能级的态密度可以调谐到非常高的值,精细的铋线可能表现出优越的热电性能。然而,对Bi表面的角分辨光发射光谱(ARPES)研究表明,Bi纳米线支持表面态,具有约5倍1012 cm-2的高载流子密度和大的有效质量,这在当前的SMSC模型中没有被考虑到。我们对直径为30nm的铋纳米线的舒布尼科夫-德哈斯振荡的研究支持了这一模型。根据我们的估计,这种二维电荷片的热功率应该是可以观察到的,我们进行了小直径Bi纳米线阵列热功率的实验研究,以测试这些相互冲突的细Bi纳米线模型
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