Design and analysis of a first-order sigma-delta analog-to-digital converter for MEMS resistive sensor

M. Ya, A. Nordin, Sheroz Khan, A. Alam, M. R. Islam, A. Naji, K. Al-Khateeb
{"title":"Design and analysis of a first-order sigma-delta analog-to-digital converter for MEMS resistive sensor","authors":"M. Ya, A. Nordin, Sheroz Khan, A. Alam, M. R. Islam, A. Naji, K. Al-Khateeb","doi":"10.1109/SMELEC.2010.5549366","DOIUrl":null,"url":null,"abstract":"This paper details the design and analysis of a first-order sigma-delta analog-to-digital converter (Σ-Δ ADC) for the MEMS resistive sensors. The working principles of the MEMS resistive sensor and Σ-Δ ADC are outlined first. To verify the functionality of the first-order Σ-Δ modulator, MATLAB© is used to simulate its overall block diagram. Each block is then designed as a CMOS circuit using Cadence Silterra 0.13µm standard COMS process. Finally, the necessary properties (such as quantization error, resolution and signal to noise ratio) of this interface circuit for MEMS resistive sensors are analyzed. It is presented that when connected to MEMS resistive sensors, the usage of Σ-Δ ADC can greatly reduce the quantization error when compared to the conventional Nyquist rate analog to digital converter.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper details the design and analysis of a first-order sigma-delta analog-to-digital converter (Σ-Δ ADC) for the MEMS resistive sensors. The working principles of the MEMS resistive sensor and Σ-Δ ADC are outlined first. To verify the functionality of the first-order Σ-Δ modulator, MATLAB© is used to simulate its overall block diagram. Each block is then designed as a CMOS circuit using Cadence Silterra 0.13µm standard COMS process. Finally, the necessary properties (such as quantization error, resolution and signal to noise ratio) of this interface circuit for MEMS resistive sensors are analyzed. It is presented that when connected to MEMS resistive sensors, the usage of Σ-Δ ADC can greatly reduce the quantization error when compared to the conventional Nyquist rate analog to digital converter.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于MEMS电阻式传感器的一阶σ - δ模数转换器的设计与分析
本文详细介绍了用于MEMS电阻式传感器的一阶Σ-Δ模数转换器(Σ-Δ ADC)的设计和分析。首先概述了MEMS电阻式传感器和Σ-Δ ADC的工作原理。为了验证一阶Σ-Δ调制器的功能,使用MATLAB©对其整体框图进行仿真。然后使用Cadence Silterra 0.13µm标准COMS工艺将每个模块设计为CMOS电路。最后,分析了该接口电路用于MEMS电阻式传感器的必要性能(量化误差、分辨率和信噪比)。研究表明,与传统奈奎斯特速率模数转换器相比,Σ-Δ模数转换器与MEMS电阻式传感器连接时,可大大降低量化误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT Optimum design of SU-8 based accelerometer with reduced cross axis sensitivity A 5-GHZ VCO for WLAN applications Effect of Mn doping on the structural and optical properties of ZnO films Ubiquitous sensor technologies: The way moving forward
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1