Artyom A. Voshchenkov, M. Efremov, A. H. Antonenko, Gennady H. Kamayev, V. Volodin, S. Arzhannikova, A. Vishnyakov, D. Marin, A. Gismatulin
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引用次数: 0
Abstract
Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.
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