Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing
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引用次数: 16
Abstract
Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and ION/IOFF ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al0.45Ga0.55Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al0.45Ga0.55Sb TFET performance.
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