W. Chang, N. Okada, H. Asai, K. Fukuda, Mitsuhiro Okada, T. Endo, Y. Miyata, T. Irisawa
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引用次数: 1
Abstract
High-k dielectrics of Al2O3, HfO2 and ZrO2 have been directly deposited on MoS2 through plasma enhanced atomic layer deposition (PEALD). Among them, PEALD-ZrO2/MoS2 has shown the highest interfacial quality with high dielectric constant and sharp interface, characterized by CV, XPS and TEM measurements. Dual gate CVD-grown MoS2 MOSFETs using PEALD-ZrO2 as a top-gate dielectric has also been demonstrated.
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