{"title":"New method for parameter extraction in deep submicrometer MOSFETs","authors":"C. Mourrain, B. Crețu, G. Ghibaudo, P. Cottin","doi":"10.1109/ICMTS.2000.844428","DOIUrl":null,"url":null,"abstract":"A new method for the MOSFET parameter extraction including second order mobility attenuation is proposed. The advantage of the method is to remain compatible with previously existing ones avoiding second order derivative procedure and therefore to be applicable for in line parametric test extraction in the microelectronics industry.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
A new method for the MOSFET parameter extraction including second order mobility attenuation is proposed. The advantage of the method is to remain compatible with previously existing ones avoiding second order derivative procedure and therefore to be applicable for in line parametric test extraction in the microelectronics industry.
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