Hsueh-Rong Chang, J. Bu, Henning M. Hauenstein, Michael Wittmann, Jack Marcinkowski, Mark Pavier, Scott Palmer, Jim Tompkins
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引用次数: 6
Abstract
High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR2DIE™ has a small area of 28.5 mm × 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
采用超薄IGBT和二极管的高功率紧凑型IGBT半桥模块已成功开发，额定电流为300A，阻塞电压为650V，具有双面冷却能力。称为COOLiR2DIE™的无线连接封装模块面积为28.5 mm × 16 mm，额定功率为200kva，这是目前报道的最紧凑的IGBT封装。在无线连接封装中实现了300A时1.6V的低导通电压。较低的导通电压和较大的热交换面积(由于可焊接的前金属(SFM))的组合，使IGBT模块的载流能力提高了30%。
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