Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications

Abstract

The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.