L. Perniola, G. Molas, G. Navarro, E. Nowak, V. Sousa, E. Vianello, B. De Salvo
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引用次数: 11
Abstract
The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive backend memory technologies, like OxRAM, CBRAM, PCM and MRAM. This paper deals with universal signatures that stand true for such disruptive technologies. A specific analysis on two case examples from the RRAM and the PCM domain, where tradeoffs can be adjusted to target specific applications, is finally proposed. Knowing in advance the tradeoffs of each technology allows us to save precious time in research and development and therefore to accelerate the time-to-market.
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